smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 2SA1385-Z features low v ce(sat) :v ce(sat) =-0.18 v typ. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -7 v collector current i c -5 a collector current pulse * i cp -7 a total power dissipation p t 10 w junction temperature t j 150 storage temperature t stg -55to+150 *pw 10ms, duty cycle 50%. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb =-50v,i e =0 -10 a emitter cut-off current i ebo v eb =-7v,i c =0 -10 a dc current gain * h fe v ce =-1v,i c = -2 a 100 200 400 collector-emitter saturation voltage * v ce(sat) i c =-2a,i b =-0.2a -0.18 -0.3 v base-emitter saturation voltage * v be(sat) i c =-2a,i b =-0.2a -1.2 v gain bandwidth product f t v ce =-10v,i c = -0.5 a 140 mhz turn-on time t on 0.08 1.0 s storage time t stg 0.55 2.5 s fall time t f 0.18 1.0 s *pw 350s, duty cycle 2%. i c =-2a,i b1 =-i b2 =-0.2a,r l =50, v cc =-10v 1 base 2 collector 3 emitter h fe classification marking m l k hfe 100 200 160 320 200 400 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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